S2800 Datasheet

  • S2800

  • SCRs 10 AMPERES RMS 50 thru 800 VOLTS

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  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by S2800/D
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
. . . designed primarily for half-wave ac control applications, such as motor controls,
heating controls and power supplies; or wherever half-wave silicon gate-controlled,
solid-state devices are needed.
鈥?/div>
Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity
and Stability
鈥?/div>
Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
鈥?/div>
Blocking Voltage to 800 Volts
A
S2800
Series
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
G
K
CASE 221A-04
(TO-220AB)
STYLE 3
MAXIMUM RATINGS
(TJ = 25掳C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 100掳C, Gate Open)
F
A
B
S2800
D
M
N
Peak Non-repetitive Reverse Voltage and
Non-Repetitive Off-State Voltage(1)
F
A
B
D
M
N
IT(RMS)
TC = 75掳C
ITSM
I2t
PGM
PG(AV)
TJ
Tstg
100
40
16
0.5
鈥?0 to +100
鈥?0 to +150
Amps
A2s
Watts
Watt
掳C
掳C
Symbol
VRRM
VDRM
50
100
200
400
600
800
VRSM
VDSM
75
125
250
500
700
900
10
Amps
Volts
Value
Unit
Volts
S2800
RMS Forward Current
(All Conduction Angles)
Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80掳C)
Circuit Fusing Considerations (t = 8.3 ms)
Forward Peak Gate Power (t
p
10
碌s)
Forward Average Gate Power
Operating Junction Temperature Range
Storage Temperature Range
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
Motorola, Inc. 1995
1

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