W39V040FAT Datasheet

  • W39V040FAT

  • 512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE

  • 515.43KB

  • 36页

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W39V040FA
512K
8 CMOS FLASH MEMORY
WITH FWH INTERFACE
1. GENERAL DESCRIPTION
The W39V040FA is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K
8 bits. For
flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are
composed of 16 smaller even pages with 4 Kbytes. The device can be programmed and erased in-
system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture
of the W39V040FA results in fast program/erase operations with extremely low current consumption.
This device can operate at two modes, Programmer bus interface mode and FWH bus interface
mode. As in the Programmer interface mode, it acts like the traditional flash but with a multiplexed
address inputs. But in the FWH interface mode, this device complies with the Intel FWH specification.
The device can also be programmed and erased using standard EPROM programmers.
2. FEATURES
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Single 3.3-volt operations:
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Hardware protection:
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3.3-volt read
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3.3-volt erase
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3.3-volt program
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Fast Program operation:
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Optional 16K byte or 64K byte Top Boot
Block with lockout protection
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#TBL & #WP support the whole chip
hardware protection
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Flexible 4K-page size can be used as
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Byte-by-Byte programming: 35
碌S
(typ.)
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Fast erase operation:
Parameter Blocks
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Low power consumption
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Chip erase 100 mS (max.)
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Sector erase 25 mS (max.)
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Page erase 25 mS (max.)
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Fast Read access time: Tkq 11 nS
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Endurance: 10K cycles (typ.)
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Twenty-year data retention
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8 Even sectors with 64K bytes each, which is
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Active current: 12.5 mA (typ. for FWH mode)
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Automatic program and erase timing with
internal V
PP
generation
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End of program or erase detection
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Toggle bit
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Data polling
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Latched address and data
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TTL compatible I/O
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Available packages: 32L PLCC, 32L STSOP,
composed of 16 flexible pages with 4K bytes
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Any individual sector or page can be erased
40L TSOP (10 x 20 mm)
-1-
Publication Release Date: December 19, 2002
Revision A2

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