SM-8 DUAL N-CHANNEL ENHANCEMENT
MODE AVALANCHE RATED MOSFET
ISSUE 1 - NOVEMBER 1995
ZDM4206N
D
1
D
1
D
2
D
2
PARTMARKING DETAIL 鈥?M4206N
G
1
S
1
G
2
S
2
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25掳C
Pulsed Drain Current
Gate-Source Voltage
Continuous Body Diode Current at T
amb
=25掳C
Avalanche Current 鈥?Repetitive
Avalanche Energy 鈥?Repetitive
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
I
SD
I
AR
E
AR
T
j
:T
stg
VALUE
60
1
8
卤
20
1
600
15
-55 to +150
UNIT
V
A
A
V
A
mA
mJ
掳C
THERMAL CHARACTERISTICS
PARAMETER
Total Power Dissipation at T
amb
= 25掳C*
Any single die 鈥渙n鈥?/div>
Both die 鈥渙n鈥?equally
Derate above 25掳C*
Any single die 鈥渙n鈥?/div>
Both die 鈥渙n鈥?equally
Thermal Resistance - Junction to Ambient*
Any single die 鈥渙n鈥?/div>
Both die 鈥渙n鈥?equally
SYMBOL
P
tot
2.25
2.75
18
22
55.6
45.5
W
W
mW/ 掳C
mW/ 掳C
掳C/ W
掳C/ W
VALUE
UNIT
* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB
with copper equal to 2 inches square.
3 - 317
1
2
3
