- Drain to Source On-state Resistance - m鈩?/div>
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
V
GS
= 4.0 V
15
10 V
10
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
I
SD
- Diode Forward Current - A
V
GS
= 4.0 V
0V
10
1
5
I
D
= 35 A
鈭?0
0
50
100
150
0.1
Pulsed
0
0.5
1
1.5
V
SD
- Source to Drain Voltage - V
0
T
ch
- Channel Temperature - 藲C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
SWITCHING CHARACTERISTICS
Ciss, Coss, Crss - Capacitance - nF
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
GS
= 0 V
f = 1 MHz
10000
V
DS
= 30 V
V
GS
= 10 V
R
G
= 10
鈩?/div>
t
r
1000
t
d(off)
100
t
d(on)
t
f
10
C
iss
1
C
oss
C
rss
10
0.1
1
10
100
0.1
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
1000
V
DS
- Drain to Source Voltage - V
60
V
DD
= 12 V
30 V
48 V
12
10
8
6
100
40
10
20
4
2
1
0.1
1
10
100
0
25
50
75
100
0
I
F
- Drain Current - A
Q
G
- Gate Charge - nC
Data Sheet D13101EJ1V0DS00
V
GS
- Gate to Source Voltage - V
t
rr
- Reverse Recovery Time - ns
di/dt = 100 A /
碌
s
V
GS
= 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
I
D
= 70 A
14
5
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