PN2369A / MMBT2369A / MMPQ2369
NPN Switching Transistor
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25掳C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage*
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
碌A,
V
BE
= 0
I
C
= 10
碌A,
I
E
= 0
I
E
= 10
碌A,
I
C
= 0
V
CB
= 20 V, I
E
= 0
V
CB
= 20 V, I
E
= 0, T
A
= 125掳C
15
40
40
4.5
0.4
30
V
V
V
V
碌A
碌A
ON CHARACTERISTICS
h
FE
DC Current Gain*
I
C
= 10 mA, V
CE
= 1.0 V
I
C
= 10 mA,V
CE
= 0.35 V,T
A
= -55掳C
I
C
= 100 mA, V
CE
= 2.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= 125掳C
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= -55掳C
I
C
= 10 mA, I
B
= 1.0 mA,T
A
= 125掳C
I
C
= 30 mA, I
B
= 3.0 mA
I
C
= 100 mA, I
B
= 10 mA
40
20
20
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage*
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.7
0.59
0.2
0.3
0.25
0.5
0.85
1.02
1.15
1.6
V
V
V
V
V
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
C
obo
C
ibo
h
fe
Output Capacitance
Input Capacitance
Small-Signal Current Gain
V
CB
= 5.0 V, I
E
= 0, f = 1.0 MHz
V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz
I
C
= 10 mA, V
CE
= 10 V,
R
G
= 2.0 k鈩? f = 100 MHz
5.0
4.0
5.0
pF
pF
SWITCHING CHARACTERISTICS
(except MMPQ2369)
t
s
t
on
t
off
Storage Time
Turn-On Time
Turn-Off Time
I
B1
= I
B2
= I
C
= 10 mA
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA
V
CC
= 3.0 V, I
C
= 10 mA,
I
B1
= 3.0 mA, I
B2
= 1.5 mA
13
12
18
ns
ns
ns
*
Pulse Test: Pulse Width
鈮?/div>
300
碌s,
Duty Cycle
鈮?/div>
2.0%
Spice Model
NPN (Is=44.14f Xti=3 Eg=1.11 Vaf=100 Bf=78.32 Ne=1.389 Ise=91.95f Ikf=.3498 Xtb=1.5 Br=12.69m Nc=2
Isc=0 Ikr=0 Rc=.6 Cjc=2.83p Mjc=86.19m Vjc=.75 Fc=.5 Cje=4.5p Mje=.2418 Vje=.75 Tr=1.073u Tf=227.6p
Itf=.3 Vtf=4 Xtf=4 Rb=10)
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