Philips Semiconductors
BUK95/963R2-40B
TrenchMOS鈩?logic level FET
100
ID
(A)
80
03nh54
5
VGS
(V)
4
VDD = 14 V
03nh52
60
3
VDD = 32 V
40
2
20
Tj = 175 潞C
Tj = 25 潞C
0
0
1
2
VGS (V)
3
1
0
0
20
40
60
80
100
QG (nC)
V
DS
= 25 V
T
j
= 25
掳C;
I
D
= 25 A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
100
IS
(A)
80
03nh51
60
40
20
Tj = 175 潞C
0
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
Tj = 25 潞C
V
GS
= 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 10844
漏 Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 03 鈥?16 January 2003
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