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EN29LV640 Datasheet

  • EN29LV640

  • Eon Silicon Solution Inc. [64 Megabit (4M x 16-bit ) CMOS 3...

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  • EON

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EN29LV640
COMMON FLASH INTERFACE (CFI)
The common flash interface (CFI) specification outlines device and host systems software
interrogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-
independent, and forward- and backward-compatible for the specified flash device families. Flash
vendors can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h, any time the device is ready to read array data.
The system can read CFI information at the addresses given in Tables 5-8.The upper address bits
(A7鈥揗SB) must be all zeros. To terminate reading CFI data, the system must write the reset
command.
The system can also write the CFI query command when the device is in the autoselect mode. The
device enters the CFI query mode and the system can read CFI data at the addresses given in
Tables 5鈥?. The system must write the reset command to return the device to the autoselect mode.
Table 5. CFI Query Identification String
Addresses
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
Data
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Description
Query Unique ASCII string 鈥淨RY鈥?/div>
Primary OEM Command Set
Address for Primary Extended Table
Alternate OEM Command set (00h = none exists)
Address for Alternate OEM Extended Table (00h = none exists)
Table 6. System Interface String
Addresses
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
Data
0027h
0036h
0000h
0000h
0003h
0000h
000Ah
0000h
0005h
0000h
0002h
0000h
Description
Vcc Min (write/erase)
DQ7-DQ4: volt, DQ3 鈥揇Q0: 100 millivolt
Vcc Max (write/erase)
DQ7-DQ4: volt, DQ3 鈥揇Q0: 100 millivolt
Vpp Min. voltage (00h = no Vpp pin present)
Vpp Max. voltage (00h = no Vpp pin present)
Typical timeout per single byte/word write 2
N
渭S
Typical timeout for Min, size buffer write 2
N
渭S
(00h = not supported)
Typical timeout per individual block erase 2
N
ms
Typical timeout for full chip erase 2
N
ms (00h = not supported)
Max. timeout for byte/word write 2
N
times typical
Max. timeout for buffer write 2
N
times typical
Max. timeout per individual block erase 2
N
times typical
Max timeout for full chip erase 2
N
times typical (00h = not supported)
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
P
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
14
漏2005 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2007/01/23

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EN29LV640H-90BCP,EN29LV640H-90BI

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