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SST27SF020-70-3C-PHE Datasheet

  • SST27SF020-70-3C-PHE

  • 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

  • 327.80KB

  • 23页

  • SST   SST

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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Byte-Program Operation
The SST27SF512/010/020 are programmed by using an
external programmer. The programming mode for
SST27SF010/020 is activated by asserting 11.4-12V on
V
PP
pin, V
DD
= 4.5-5.5V, V
IL
on CE# pin, and
V
IH
on OE#
pin. The programming mode for SST27SF512 is activated
by asserting 11.4-12V on OE#/V
PP
pin, V
DD
= 4.5-5.5V,
and V
IL
on CE# pin. These devices are programmed byte-
by-byte with the desired data at the desired address using
a single pulse (CE# pin low for SST27SF512 and PGM#
pin low for SST27SF010/020) of 20 碌s. Using the MTP pro-
gramming algorithm, the Byte-Programming process con-
tinues byte-by-byte until the entire chip has been
programmed.
Product Identification Mode
The Product Identification mode identifies the devices as
the SST27SF512, SST27SF010 and SST27SF020 and
manufacturer as SST. This mode may be accessed by the
hardware method. To activate this mode for SST27SF010/
020, the programming equipment must force V
H
(11.4-12V)
on address A
9
with V
PP
pin at V
DD
(4.5-5.5V) or V
SS
. To
activate this mode for SST27SF512, the programming
equipment must force V
H
(11.4-12V) on address A
9
with
OE#/V
PP
pin at V
IL
. Two identifier bytes may then be
sequenced from the device outputs by toggling address line
A
0
. For details, see Tables 3 and 4 for hardware operation.
TABLE 1: P
RODUCT
I
DENTIFICATION
Address
Manufacturer鈥檚 ID
Device ID
SST27SF512
SST27SF010
SST27SF020
0001H
0001H
0001H
A4H
A5H
A6H
T1.2 1152
Chip-Erase Operation
The only way to change a data from a 鈥?鈥?to 鈥?鈥?is by electri-
cal erase that changes every bit in the device to 鈥?鈥? Unlike
traditional EPROMs, which use UV light to do the Chip-
Erase, the SST27SF512/010/020 uses an electrical Chip-
Erase operation. This saves a significant amount of time
(about 30 minutes for each Erase operation). The entire
chip can be erased in a single pulse of 100 ms (CE# pin
low for SST27SF512 and PGM# pin for SST27SF010/
020). In order to activate the Erase mode for SST27SF010/
020, the 11.4-12V is applied to V
PP
and A
9
pins, V
DD
= 4.5-
5.5V, V
IL
on CE# pin, and
V
IH
on OE# pin. In order to acti-
vate Erase mode for SST27SF512, the 11.4-12V is applied
to OE#/V
PP
and A
9
pins, V
DD
= 4.5-5.5V, and V
IL
on CE#
pin. All other address and data pins are 鈥渄on鈥檛 care鈥? The
falling edge of CE# (PGM# for SST27SF010/020) will start
the Chip-Erase operation. Once the chip has been erased,
all bytes must be verified for FFH. Refer to Figures 11 and
12 for the flowcharts.
Data
BFH
0000H
漏2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
2

SST27SF020-70-3C-PHE 产品属性

  • Greenliant

  • 8 bit

  • Flash

  • 2 Mbit

  • Non Sectored

  • Asynchronous

  • Parallel

  • 70 ns

  • 5.5 V

  • 4.5 V

  • 30 mA

  • + 70 C

  • Through Hole

  • PDIP-32

  • Tube

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