512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
Absolute Maximum Stress Ratings
(Applied conditions greater than those listed under 鈥淎bsolute Maximum
Stress Ratings鈥?may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55掳C to +125掳C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65掳C to +150掳C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
DD
+0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
DD
+2.0V
Voltage on A
9
and V
PP
Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V
Package Power Dissipation Capability (T
A
= 25掳C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300掳C
Surface Mount Solder Reflow Temperature
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260掳C for 10 seconds
Output Short Circuit Current
2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
1. Excluding certain with-Pb 32-PLCC units, all packages are 260
掳
C capable in both non-Pb and with-Pb solder versions.
Certain with-Pb 32-PLCC package types are capable of 240
掳
C for 10 seconds; please consult the factory for the latest information.
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
O
PERATING
R
ANGE
Range
Commercial
Ambient Temp
0掳C to +70掳C
V
DD
4.5-5.5V
V
PP
11.4-12V
AC C
ONDITIONS OF
T
EST
Input Rise/Fall Time . . . . . . . . . . . 10 ns
Output Load . . . . . . . . . . . . . . . . . C
L
= 30 pF for 70 ns
See Figures 9 and 10
TABLE 5: R
EAD
M
ODE
DC O
PERATING
C
HARACTERISTICS FOR
SST27SF512/010/020
V
DD
= 4.5-5.5V, V
PP
=V
DD
OR
V
SS
(T
A
= 0掳C
TO
+70掳C (C
OMMERCIAL
))
Limits
Symbol Parameter
I
DD
V
DD
Read Current
30
I
PPR
V
PP
Read Current
100
I
SB1
I
SB2
I
LI
I
LO
V
IL
V
IH
V
OL
V
OH
I
H
Standby V
DD
Current
(TTL input)
Standby V
DD
Current
(CMOS input)
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Supervoltage Current for A
9
2.4
200
2.0
3
100
1
10
0.8
V
DD
+0.5
0.2
碌A
mA
碌A
碌A
碌A
V
V
V
V
碌A
mA
Min
Max
Units
Test Conditions
Address input=V
ILT
/V
IHT
at f=1/T
RC
Min
V
DD
=V
DD
Max
CE#=OE#=V
IL
, all I/Os open
Address input=V
ILT
/V
IHT
at f=1/T
RC
Min
V
DD
=V
DD
Max, V
PP
=V
DD
CE#=OE#=V
IL
, all I/Os open
CE#=V
IH
, V
DD
=V
DD
Max
CE#=V
DD
-0.3
V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
V
DD
=V
DD
Min
V
DD
=V
DD
Max
I
OL
=2.1 mA, V
DD
=V
DD
Min
I
OH
=-400 碌A, V
DD
=V
DD
Min
CE#=OE#=V
IL
, A
9
=V
H
Max
T5.6 1152
漏2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
7