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SST27SF020-70-3C-PHE Datasheet

  • SST27SF020-70-3C-PHE

  • 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash

  • 327.80KB

  • 23页

  • SST   SST

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512 Kbit / 1 Mbit / 2 Mbit Many-Time Programmable Flash
SST27SF512 / SST27SF010 / SST27SF020
Data Sheet
TABLE 6: P
ROGRAM
/E
RASE
DC O
PERATING
C
HARACTERISTICS FOR
SST27SF512
V
DD
=4.5-5.5V, V
PP
=V
PPH
(T
A
=25掳C卤5掳C)
Limits
Symbol Parameter
I
DD
I
PP
I
LI
I
LO
V
H
I
H
V
PPH
V
DD
Erase or Program Current
V
PP
Erase or Program Current
Input Leakage Current
Output Leakage Current
Supervoltage for A
9
Supervoltage Current for A
9
High Voltage for OE#/V
PP
Pin
11.4
11.4
Min
Max Units Test Conditions
30
3
1
10
12
200
12
mA
mA
碌A
碌A
V
碌A
V
T6.5 1152
CE#=V
IL,
OE#/V
PP
=11.4-12V, V
DD
=V
DD
Max
CE#=V
IL,
OE#/V
PP
=11.4-12V, V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
CE#=OE#/V
PP
=V
IL,
CE#=OE#/V
PP
=V
IL,
A
9
=V
H
Max
TABLE 7: P
ROGRAM
/E
RASE
DC O
PERATING
C
HARACTERISTICS FOR
SST27SF010/020
V
DD
=4.5-5.5V, V
PP
=V
PPH
(T
A
=25掳C卤5掳C)
Limits
Symbol Parameter
I
DD
I
PP
I
LI
I
LO
V
H
I
H
V
PPH
V
DD
Erase or Program Current
V
PP
Erase or Program Current
Input Leakage Current
Output Leakage Current
Supervoltage for A
9
Supervoltage Current for A
9
High Voltage for V
PP
Pin
11.4
11.4
Min
Max Units Test Conditions
30
3
1
10
12
200
12
mA
mA
碌A
碌A
V
碌A
V
T7.5 1152
CE#=PGM#=V
IL,
OE#=V
IH
, V
PP
=11.4-12V,
V
DD
=V
DD
Max
CE#=PGM#=V
IL,
OE#=V
IH
, V
PP
=11.4-12V,
V
DD
=V
DD
Max
V
IN
=GND to V
DD
, V
DD
=V
DD
Max
V
OUT
=GND to V
DD
, V
DD
=V
DD
Max
CE#=OE#=V
IL,
CE#=OE#=V
IL,
A
9
=V
H
Max
TABLE 8: R
ECOMMENDED
S
YSTEM
P
OWER
-
UP
T
IMINGS
Symbol
T
PU-READ1
T
PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Write Operation
Minimum
100
100
Units
碌s
碌s
T8.1 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: C
APACITANCE (T
A
= 25掳C, f=1 Mhz, other pins open)
Parameter
C
I/O
C
IN
1
1
Description
I/O Pin Capacitance
Input Capacitance
Test Condition
V
I/O
= 0V
V
IN
= 0V
Maximum
12 pF
6 pF
T9.0 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: R
ELIABILITY
C
HARACTERISTICS
Symbol
N
END1
T
DR1
Parameter
Endurance
Data Retention
Minimum Specification
1000
100
Units
Cycles
Years
Test Method
JEDEC Standard A117
JEDEC Standard A103
T10.3 1152
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
漏2005 Silicon Storage Technology, Inc.
S71152-11-000
9/05
8

SST27SF020-70-3C-PHE 产品属性

  • Greenliant

  • 8 bit

  • Flash

  • 2 Mbit

  • Non Sectored

  • Asynchronous

  • Parallel

  • 70 ns

  • 5.5 V

  • 4.5 V

  • 30 mA

  • + 70 C

  • Through Hole

  • PDIP-32

  • Tube

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