256-Mbit J3 (x8/x16)
6.0
6.1
Table 6.
Electrical Specifications
DC Current Characteristics
DC Current Characteristics (Sheet 1 of 2)
VCCQ
VCC
2.7 - 3.6V
2.7 - 3.6V
Typ
Max
卤1
卤10
Unit
碌A
碌A
V
CC
= V
CC
Max; V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
V
CC
= V
CC
Max; V
CCQ
= V
CCQ
Max
V
IN
= V
CCQ
or GND
CMOS Inputs, V
CC
= V
CC
Max,
Device is disabled (see
Table 13, 鈥淐hip Enable
Truth Table鈥?on page 33),
RP# = V
CCQ
卤 0.2 V
TTL Inputs, V
CC
= V
CC
Max,
Device is disabled (see
Table 13),
RP# = V
IH
RP# = GND 卤 0.2 V, I
OUT
(STS) = 0 mA
CMOS Inputs, V
CC
= V
CC
Max, V
CCQ
= V
CCQ
Max using standard 4 word page mode reads.
Device is enabled (see
Table 13)
f = 5 MHz, I
OUT
= 0 mA
CMOS Inputs,V
CC
= V
CC
Max, V
CCQ
= V
CCQ
Max using standard 4 word page mode reads.
Device is enabled (see
Table 13)
f = 33 MHz, I
OUT
= 0 mA
鈥?CMOS Inputs, V
CC
= V
CC
Max, V
CCQ
=
V
CCQ
Max using standard 8 word page
mode reads.
鈥?Device is enabled (see
Table 13)
f = 5 MHz, I
OUT
= 0 mA
鈥?CMOS Inputs,V
CC
= V
CC
Max, V
CCQ
=
V
CCQ
Max using standard 8 word page
mode reads.
30
54
mA
鈥?Device is enabled (see
Table 13)
f = 33 MHz, I
OUT
= 0 mA
鈥?Density: 128-, 64-, and 32- Mbit
鈥?CMOS Inputs,V
CC
= V
CC
Max, V
CCQ
=
V
CCQ
Max using standard 8 word page
mode reads.
26
46
mA
鈥?Device is enabled (see
Table 13)
f = 33 MHz, I
OUT
= 0 mA
鈥?Density: 256Mbit
CMOS Inputs, V
PEN
= V
CC
TTL Inputs, V
PEN
= V
CC
1,3
1
1
Test Conditions
Notes
Symbol
I
LI
I
LO
Parameter
Input and V
PEN
Load Current
Output Leakage Current
50
I
CCS
V
CC
Standby Current
0.71
I
CCD
V
CC
Power-Down Current
50
120
碌A
1,2,3
2
120
mA
碌A
15
4-
word
Page
24
20
mA
29
mA
10
I
CCR
V
CC
Page Mode Read
Current
15
mA
8-
word
Page
I
CCW
V
CC
Program or Set Lock-
Bit Current
35
40
60
70
mA
mA
1,4
Datasheet
19