E28F640J3C-150 Datasheet

  • E28F640J3C-150

  • Intel StrataFlash Memory (J3)

  • 909.85KB

  • 72页

  • INTEL   INTEL

扫码查看芯片数据手册

上传产品规格书

PDF预览

256-Mbit J3 (x8/x16)
Table 6.
DC Current Characteristics (Sheet 2 of 2)
VCCQ
VCC
2.7 - 3.6V
2.7 - 3.6V
Typ
35
40
Max
70
80
10
Unit
mA
mA
mA
CMOS Inputs, V
PEN
= V
CC
TTL Inputs, V
PEN
= V
CC
Device is enabled (see
Table 13)
1,5
1,4
Test Conditions
Notes
Symbol
I
CCE
I
CCWS
I
CCES
Parameter
V
CC
Block Erase or Clear
Block Lock-Bits Current
V
CC
Program Suspend or
Block Erase Suspend
Current
NOTES:
1. All currents are in RMS unless otherwise noted. These currents are valid for all product versions (packages and
speeds). Contact Intel鈥檚 Application Support Hotline or your local sales office for information about typical
specifications.
2. Includes STS.
3. CMOS inputs are either V
CC
卤 0.2 V or GND 卤 0.2 V. TTL inputs are either V
IL
or V
IH
.
4. Sampled, not 100% tested.
5. I
CCWS
and I
CCES
are specified with the device selected. If the device is read or written while in erase suspend
mode, the device鈥檚 current draw is I
CCR
and I
CCWS
6.2
Table 7.
DC Voltage Characteristics
DC Voltage Characteristics
Symbol
V
IL
V
IH
Parameter
Input Low Voltage
Input High Voltage
Min
鈥?.5
2.0
Max
0.8
V
CCQ
+ 0.5
0.4
V
OL
Output Low Voltage
0.2
0.85
V
CCQ
V
CCQ
鈥?/div>
0.2
V
PEN
Lockout during Program,
Erase and Lock-Bit Operations
2.2
V
V
V
V
Unit
V
V
V
V
CCQ
= V
CCQ
Min
I
OL
= 2 mA
V
CCQ
= V
CCQ
Min
I
OL
= 100 碌A
V
CCQ
= V
CCQ
Min
I
OH
= 鈥?.5 mA
V
CCQ
= V
CCQ
Min
I
OH
= 鈥?00 碌A
2,3,4,7
Test Conditions
Notes
2, 6
2,6
1,2
V
OH
Output High Voltage
1,2
V
PENLK
20
Datasheet

E28F640J3C-150相关型号PDF文件下载

扫码下载APP,
一键连接广大的电子世界。

在线人工客服

买家服务:
卖家服务:

0571-85317607

客服在线时间周一至周五
9:00-17:30

关注官方微信号,
第一时间获取资讯。

建议反馈

联系人:

联系方式:

按住滑块,拖拽到最右边
>>
感谢您向阿库提出的宝贵意见,您的参与是维库提升服务的动力!意见一经采纳,将有感恩红包奉上哦!