E28F640J3C-150 Datasheet

  • E28F640J3C-150

  • Intel StrataFlash Memory (J3)

  • 909.85KB

  • 72页

  • INTEL   INTEL

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256-Mbit J3 (x8/x16)
7.3
Block Erase, Program, and Lock-Bit Configuration
Performance
Table 10. Configuration Performance
#
W16
W16
t
WHQV3
t
EHQV3
Sym
Parameter
Write Buffer Byte Program Time
(Time to Program 32 bytes/16 words)
Byte Program Time (Using Word/Byte Program Command)
Block Program Time (Using Write to Buffer Command)
W16
W16
W16
W16
W16
t
WHQV4
t
EHQV4
t
WHQV5
t
EHQV5
t
WHQV6
t
EHQV6
t
WHRH1
t
EHRH1
t
WHRH
t
EHRH
Block Erase Time
Set Lock-Bit Time
Clear Block Lock-Bits Time
Program Suspend Latency Time to Read
Erase Suspend Latency Time to Read
Typ
218
210
0.8
1.0
64
0.5
25
26
Max
(8)
654
630
2.4
5.0
75/85
0.70/1.4
75/90
35/40
Unit
碌s
碌s
sec
sec
碌s
sec
碌s
碌s
Notes
1,2,3,4,5,6,7
1,2,3,4
1,2,3,4
1,2,3,4
1,2,3,4,9
1,2,3,4,10
1,2,3,9
1,2,3,9
NOTES:
1. Typical values measured at T
A
= +25 掳C and nominal voltages. Assumes corresponding lock-bits are
not set. Subject to change based on device characterization.
2. These performance numbers are valid for all speed versions.
3. Sampled but not 100% tested.
4. Excludes system-level overhead.
5. These values are valid when the buffer is full, and the start address is aligned on a 32-byte boundary.
6. Effective per-byte program time (t
WHQV1
, t
EHQV1
) is 6.8 碌s/byte (typical).
7. Effective per-word program time (t
WHQV2
, t
EHQV2
) is 13.6 碌s/word (typical).
8. Max values are measured at worst case temperature and V
CC
corner after 100k cycles (except as
noted).
9. Max values are expressed at -25 掳C/-40 掳C.
10.Max values are expressed at 25 掳C/-40 掳C.
Datasheet
27

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