K4T1G164QA-ZCD5 Datasheet

  • K4T1G164QA-ZCD5

  • 1Gb A-die DDR2 SDRAM Specification

  • 612.12KB

  • 28页

  • SAMSUNG   SAMSUNG

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1G A-die DDR2 SDRAM
VOH + x mV
VOH + 2x mV
tHZ
tRPST end point
T2
T1
VOL + 2x mV
VOL + x mV
VTT - x mV
VTT - 2x mV
T1
T2
VTT + 2x mV
VTT + x mV
tLZ
DDR2 SDRAM
tRPRE begin point
tHZ,tRPST end point = 2*T1-T2
tLZ,tRPRE begin point = 2*T1-T2
<Test method for tLZ, tHZ, tRPRE and tRPST>
29. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the V
IH(ac)
level to the differ-
ential data strobe crosspoint for a rising signal, and from the input signal crossing at the V
IL(ac)
level to the differential data strobe crosspoint for a falling
signal applied to the device under test.
30. Input waveform timing with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the V
IH(dc)
level to the differ-
ential data strobe crosspoint for a rising signal and V
IL(dc)
to the differential data strobe crosspoint for a falling signal applied to the device under test.
Differential Input waveform timing
DQS
DQS
tDS
tDH
tDS
tDH
V
DDQ
V
IH(ac)
min
V
IH(dc)
min
V
REF(dc)
V
IL(dc)
max
V
IL(ac)
max
V
SS
Page 26 of 28
Rev. 1.1 Aug. 2005

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