M28W320EB-ZB Datasheet

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M28W320EBT, M28W320EBB

Table 26. Device Geometry Definition

Offset Word

Mode

27h

28h

29h

2Ah

2Bh

2Ch

Data

0016h

0001h

0000h

0003h

0000h

0002h

Description

Device Size = 2

n

in number of bytes

Flash Device Interface Code description

Maximum number of bytes in multi-byte program or page = 2

n

Number of Erase Block Regions within the device.

It specifies the number of regions within the device containing contiguous

Erase Blocks of the same size.

Region 1 Information

Number of identical-size erase block = 003Eh+1

Region 1 Information

Block size in Region 1 = 0100h * 256 byte

Region 2 Information

Number of identical-size erase block = 0007h+1

Region 2 Information

Block size in Region 2 = 0020h * 256 byte

Region 1 Information

Number of identical-size erase block = 0007h+1

Region 1 Information

Block size in Region 1 = 0020h * 256 byte

Region 2 Information

Number of identical-size erase block = 003Eh+1

Region 2 Information

Block size in Region 2 = 0100h * 256 byte

Value

4MByte

x16

Async

8

2

2Dh

2Eh

M28W320EBT

2Fh

30h

31h

32h

33h

34h

2Dh

2Eh

M28W320EBB

2Fh

30h

31h

32h

33h

34h

003Eh

0000h

0000h

0001h

0007h

0000h

0020h

0000h

0007h

0000h

0020h

0000h

003Eh

0000h

0000h

0001h

63

64KByte

8

8KByte

8

8KByte

63

64KByte

35/45

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  16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
  
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  16 Mbit (1Mb x16, Boot Block) Low Voltage Flash Memory
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  8 Mbit (512Kb x16, Boot Block) Low Voltage Flash Memory
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• M28W800T
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  16 Mbit 1Mb x16, Boot Block Low Voltage Flash Memory
  
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• M28W160BB
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• M28W160BB
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• M28W160BT
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• M28W160BT
  英文版
  16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
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• M28W160CB
  英文版
  16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
  
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• M28W160CB
  英文版
  16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory
  
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