2SK2919 Datasheet

  • 2SK2919

  • N-Channel Silicon MOSFET

  • 106.48KB

  • Sanyo

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Ordering number:ENN6121
N-Channel Silicon MOSFET
2SK2919
Ultrahigh-Speed Switching Applications
Features
路 Low ON resistance.
路 Ultrahigh-speed switching.
路 On-chip high-speed diode (t
rr
=100ns).
Package Dimensions
unit:mm
2128
[2SK2919]
8.2
7.8
6.2
3
0.4
0.2
0.6
4.2
1.2
8.4
10.0
1.0
2.54
1
2
1.0
2.54
0.3
0.6
5.08
10.0
6.0
6.2
5.2
7.8
0.7
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Tc=25掳C
Conditions
Ratings
2.5
Unit
600
卤30
2
8
35
150
V
V
A
A
W
藲C
藲C
鈥?5 to +150
Electrical Characteristics
at Ta = 25藲C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
ID=10mA, VGS=0
VDS=480V, VGS=0
VGS=卤30V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=1A
VGS=10V, ID=1A
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
2.0
0.8
1.5
3.2
400
55
15
4.3
Conditions
Ratings
min
600
1.0
卤100
3.0
typ
max
Unit
V
mA
nA
V
S
鈩?/div>
pF
pF
pF
Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source.
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft鈥檚
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21400TS (KOTO) TA-2283 No.6121鈥?/4

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