CY7C1019CV33-15ZXI Datasheet

  • CY7C1019CV33-15ZXI

  • 128K x 8 Static RAM

  • 504.17KB

  • 11页

  • CYPRESS

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CY7C1019CV33
128K x 8 Static RAM
Features
鈥?Pin and function compatible with CY7C1019BV33
鈥?High speed
鈥?t
AA
= 10 ns
鈥?CMOS for optimum speed/power
鈥?Data retention at 2.0V
鈥?Center power/ground pinout
鈥?Automatic power-down when deselected
鈥?Easy memory expansion with CE and OE options
鈥?Available in Pb-free and non Pb-free 48-ball VFBGA,
32-pin TSOP II and 400-mil SOJ package
device has an automatic power-down feature that significantly
reduces power consumption when deselected.
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
0
through I/O
7
) is then written into the location
specified on the address pins (A
0
through A
16
).
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
0
through I/O
7
) are placed in a
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW, and WE LOW).
The CY7C1019CV33 is available in Standard 48-ball FBGA,
32-pin TSOP II and 400-mil-wide SOJ packages
Functional Description
The CY7C1019CV33 is a high-performance CMOS static
RAM organized as 131,072 words by 8 bits. Easy memory
expansion is provided by an active LOW Chip Enable (CE), an
active LOW Output Enable (OE), and tri-state drivers. This
Logic Block Diagram
Pin Configuration
SOJ/TSOP II
Top View
A
0
A
1
A
2
A
3
CE
I/O
0
I/O
1
V
CC
V
SS
I/O
2
I/O
3
WE
A
4
A
5
A
6
A
7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A
16
A
15
A
14
A
13
OE
I/O
7
I/O
6
V
SS
V
CC
I/O
5
I/O
4
A
12
A
11
A
10
A
9
A
8
I/O
INPUT BUFFER
0
A
0
A
1
A
2
A
3
A
4
A
5
A
6
A
7
A
8
I/O
ROW DECODER
1
I/O
SENSE AMPS
2
128K x 8
ARRAY
I/O
I/O
I/O
I/O
I/O
3
4
5
CE
WE
OE
COLUMN
DECODER
POWER
DOWN
6
7
A
9
A
10
A
11
A
12
A
13
A
14
A
15
A
16
Cypress Semiconductor Corporation
Document #: 38-05130 Rev. *F
鈥?/div>
198 Champion Court
鈥?/div>
San Jose
,
CA 95134-1709
鈥?/div>
408-943-2600
Revised August 3, 2006
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CY7C1019CV33-15ZXI PDF文件相关型号

CY7C1019D,CY7C1019D-10VXC,CY7C1019D-10ZXI,CY7C1019D-12ZXI

CY7C1019CV33-15ZXI 产品属性

  • 585

  • 集成电路 (IC)

  • 存储器

  • -

  • RAM

  • SRAM - 异步

  • 1M (128K x 8)

  • 15ns

  • 并联

  • 3 V ~ 3.6 V

  • -40°C ~ 85°C

  • 32-SOIC(0.400",10.16mm 宽)

  • 32-TSOP II

  • 托盘

CY7C1019CV33-15ZXI相关型号PDF文件下载

  • 型号
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  • 英文版
    16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy
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  • 英文版
    32K x 8/9 Dual-Port Static RAM
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  • 英文版
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  • 英文版
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  • 英文版
    32K x 8/9 Dual-Port Static RAM
    Cypress
  • 英文版
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  • 英文版
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    CYPRESS [C...
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  • 英文版
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  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT...
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  • 英文版
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    CYPRESS [C...
  • 英文版
    4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int...
    Cypress
  • 英文版
    16K x 16/18 Dual-Port Static RAM
    Cypress
  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
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  • 英文版
    32K/64K x 16/18 Dual-Port Static RAM
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  • 英文版
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  • 英文版
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    CYPRESS [C...

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