DF3A8.2LFU
TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type
DF3A8.2LFU
Diodes for Protecting Against ESD
Unit: mm
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Because two devices are mounted on an ultra compact package, it is
possible to allow reducing the number of the parts and the mounting
cost.
Zener voltage correspond to E24 Series.
Low total capacitance: C
T
= 5.0 pF (typ.)
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Maximum Ratings
(Ta
=
25掳C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
200
125
-55
to 125
Unit
mW
掳C
掳C
JEDEC
JEITA
TOSHIBA
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鈥?/div>
1-2P1A
Electrical Characteristics
(Ta
=
25掳C)
Characteristics
Zener voltage
Dynamic impedance
Knee dynamic impedance
Reverse current
Total capacitance
Symbol
V
Z
Z
Z
Z
ZK
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
I
Z
=
0.5 mA
V
R
=
5 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
7.8
戮
戮
戮
戮
Typ.
8.2
戮
戮
戮
5.0
Max
8.6
60
100
0.5
戮
Unit
V
W
W
mA
pF
Guaranteed Level of ESD Immunity
Marking
Equivalent Circuit
(top view)
Test Condition
IEC61000-4-2
(contact discharge)
ESD Immunity Level
卤6
kV
FU
Q1
Q2
1
2002-01-16
1
2
3
