Discharge (ESD).
limitation, the constant voltage diode application.
鈥?/div>
The mounting of two devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25掳C)
Characteristics
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
100
125
鈭?5~125
Unit
mW
掳C
掳C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (鈥淗andling
Precautions鈥?鈥淒erating Concept and Methods鈥? and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
JEITA
TOSHIBA
鈳?/div>
鈳?/div>
1-2P1A
Weight: 0.006 g (typ.)
Electrical Characteristics
(Ta = 25掳C)
Characteristics
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
=
5 mA
I
Z
=
5 mA
V
R
=
1 V
V
R
= 0, f = 1 MHz
Test Condition
Min
3.1
鈳?/div>
鈳?/div>
鈥?/div>
Typ.
3.3
鈳?/div>
鈳?/div>
115
Max
3.5
130
20
鈥?/div>
Unit
V
惟
渭A
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
卤
30 kV
Criterion: No damage to device elements
1
2007-11-01
DF3A3.3FU相关型号PDF文件下载
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