DS1210 Datasheet

  • DS1210

  • Nonvolatile Controller Chip

  • 69.30KB

  • Dallas

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DS1210
Nonvolatile Controller Chip
www.dalsemi.com
FEATURES
Converts CMOS RAMs into nonvolatile
memories
Unconditionally write protects when V
CC
is
out of tolerance
Automatically switches to battery when
power-fail occurs
Space saving 8-pin DIP
Consumes less than 100 nA of battery current
Tests battery condition on power up
Provides for redundant batteries
Optional 5% or 10% power-fail detection
Low forward voltage drop on the V
CC
switch
Optional 16-pin SOIC surface mount package
Optional industrial temperature range of
-40掳C to +85掳C
PIN ASSIGNMENT
VCCO
VBAT1
TOL
GND
1
2
3
4
8
7
6
5
VCCI
VBAT2
CEO
CE
DS1210 8-pin DIP (300-mil)
See Mech. Drawings Section
NC
VCCO
NC
VBAT1
NC
TOL
NC
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
VCCI
NC
VBAT2
NC
CEO
NC
CE
DS1210S 16-pin SOIC (300-mil)
See Mech. Drawings Section
PIN DESCRIPTION
V
CCO
V
BAT1
TOL
GND
CE
CEO
V
BAT2
V
CCI
NC
- RAM Supply
- + Battery 1
- Power Supply Tolerance
- Ground
- Chip Enable Input
- Chip Enable Output
- + Battery 2
- + Supply
- No Connect
DESCRIPTION
The DS1210 Nonvolatile Controller Chip is a CMOS circuit which solves the application problem of
converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-of-tolerance
condition. When such a condition is detected, chip enable is inhibited to accomplish write protection and
the battery is switched on to supply the RAM with uninterrupted power. Special circuitry uses a low-
leakage CMOS process which affords precise voltage detection at extremely low battery consumption.
The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the
DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation
can be achieved.
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DS1210 产品属性

  • Lead (SnPb) Finish for COTSObsolescence Mitigation Program

  • 49

  • 集成电路 (IC)

  • 存储器 - 控制器

  • -

  • 非易失性 RAM

  • 4.75 V ~ 5.5 V

  • 0°C ~ 70°C

  • 8-DIP(0.300",7.62mm)

  • 8-PDIP

  • 管件

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