Micro-Electro-Magnetical Tech Co.
SCHOTTKY DIE SPECIFICATION
General Description: 40 V 2 A (Low Ir)
ELECTRICAL CHARACTERISTICS
SYM
DC Blocking Voltage:
Ir=1mA(for wafer form) VRRM
Ir=0.5mA (for dice form)
Average Rectified Forward Current
IFAV
Maximum Instantaneous Forward Voltage
@ 2 Amperes, Ta=25掳C
VF MAX
Maximum Instantaneous Reverse Voltage
VR= 40 Volt, Ta=25掳C
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperatures
TYPE: MBR240
Single Anode
Spec. Limit
40
2
0.55
0.48
Die Sort UNIT
42.5
Volt
Amp
Volt
IR MAX
Cj MAX
IFSM
Tj
TSTG
0.1
0.08
mA
pF
60
-65 to +150
-65 to +150
Amp
掳C
掳C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM
A
B
C
D
ITEM
Die Size
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Thickness (Max)
um
2
1245
1025
1203
254
305
Mil
2
49.01
40.3
41.1
10
12
A
C
B
Top-side Metal
SiO2 Passivation
P
+
Guard Ring
Back-side Metal
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
D
1
