MBR2550CT Datasheet

  • MBR2550CT

  • 30 Ampere Schottky Barrier Rectifiers

  • 32.00KB

  • 3页

  • FAIRCHILD

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MBR2535CT - MBR2560CT
Discrete POWER & Signal
Technologies
MBR2535CT - MBR2560CT
Features
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Low power loss, high efficiency.
High surge capacity.
For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
Metal silicon junction, majority carrier
conduction.
High current capacity, low forward
voltage drop.
Guard ring for over voltage protection.
0.113(2.87)
0.103(2.62)
0.27(6.86)
0.23(5.84)
0.412(10.5)
MAX
0.154(3.91)
0.148(3.74)
0.185(4.70)
0.175(4.44)
0.055(1.40)
0.045(1.14)
0.594(15.1)
0.587(14.9)
TO-220AB
1
0.16(4.06)
0.14(3.56)
2
3
0.11(2.79)
0.10(2.54)
PIN 1
+
PIN 3
CASE
PIN 2
0.037(0.94)
0.027(0.68)
0.56(14.22)
0.53(13.46)
30 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(repetitive)
i
f(surge)
P
D
R
胃JA
R
胃JL
T
stg
T
J
T
A
= 25掳C unless otherwise noted
0.025(0.64)
0.105(2.67)
0.095(2.41)
0.014(0.35)
Dimensions are in: inches (mm)
Parameter
Average Rectified Current
.375 " lead length @ T
A
= 130掳C
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 KHz) @ T
A
= 130掳C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25掳C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
Value
30
Units
A
30
150
2.0
16.6
60
1.5
-65 to +175
-65 to +150
A
A
W
mW/掳C
掳C/W
掳C/W
掳C
掳C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
T
A
= 25掳C unless otherwise noted
Device
2535CT
2545CT
45
31
45
10,000
0.2
40
-
-
0.82
0.73
1.0
1.0
50
0.75
0.65
-
-
0.5
2550CT
50
35
50
2560CT
60
42
60
35
24
35
Units
V
V
V
V/uS
mA
mA
V
V
V
V
A
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage
(Rated V
R
)
Voltage Rate of Change (Rated V
R
)
Maximum Reverse Current
T
A
= 25掳C
@ rated V
R
T
A
= 125掳C
Maximum Forward Voltage
I
F =
15 A, T
C
= 25掳C
I
F =
15 A, T
C
= 125掳C
I
F =
30 A, T
C
= 25掳C
I
F =
30 A, T
C
= 125掳C
Peak Repetitive Reverse Surge
Current
2.0 us Pulse Width, f = 1.0 KHz
漏1999
Fairchild Semiconductor Corporation
MBR2535CT - MBR2560CT, Rev. A

MBR2550CT PDF文件相关型号

MBR2560CT,MBRA3045N,MBRP1545N,MBRP2045N,MBRP3010N,MBRP3045N,MBRS130,MBRS130L,MBRS140,MBRS340,MC7805AE,MC7805E,MC7806AE

MBR2550CT 产品属性

  • 50

  • 分离式半导体产品

  • 二极管,整流器 - 阵列

  • -

  • 750mV @ 15A

  • 1mA @ 50V

  • 30A

  • 50V

  • -

  • 肖特基

  • 快速恢复 = 200mA(Io)

  • 1 对共阴极

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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