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MRF7S19170HR3 Datasheet

  • MRF7S19170HR3

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • 406.67KB

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF7S19170H
Rev. 0, 10/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
鈥?/div>
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1400 mA, P
out
= 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?17.2 dB
Drain Efficiency 鈥?32%
Device Output Signal PAR 鈥?6.2 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset 鈥?- 37.5 dBc in 3.84 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW
Peak Tuned Output Power
鈥?/div>
P
out
@ 1 dB Compression Point
w
170 Watts CW
Features
鈥?/div>
100% PAR Tested for Guaranteed Output Power Capability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
鈥?/div>
Designed for Digital Predistortion Error Correction Systems
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S19170HR3
MRF7S19170HSR3
1930 - 1990 MHz, 50 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF7S19170HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF7S19170HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
掳C
掳C
掳C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80掳C, 170 W CW
Case Temperature 72掳C, 25 W CW
Symbol
R
胃JC
Value
(2,3)
0.25
0.31
Unit
掳C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF7S19170HR3 MRF7S19170HSR3
1
RF Device Data
Freescale Semiconductor

MRF7S19170HR3 产品属性

  • RF Devices Discontinuation 28/Jun/2011

  • 250

  • 分离式半导体产品

  • RF FET

  • -

  • LDMOS

  • 1.93GHz

  • 17.2dB

  • 28V

  • 10µA

  • -

  • 1.4A

  • 50W

  • 65V

  • NI-880

  • NI-880

  • 带卷 (TR)

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