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MRF7S38010HR3 Datasheet

  • MRF7S38010HR3

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • 525.44KB

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF7S38010H
Rev. 0, 8/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
3800 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
鈥?/div>
Typical WiMAX Performance: V
DD
= 30 Volts, I
DQ
= 160 mA, P
out
=
2 Watts Avg., f = 3400 - 3600 MHz, 802.16d, 64 QAM
3
/
4
, 4 bursts, 7 MHz
Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on
CCDF.
Power Gain 鈥?15 dB
Drain Efficiency 鈥?17%
Device Output Signal PAR 鈥?8.5 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset 鈥?- 49 dBc in 0.5 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 32 Vdc, 3500 MHz, 10 Watts CW
Peak Tuned Output Power
鈥?/div>
P
out
@ 1 dB Compression Point
w
10 Watts CW
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF7S38010HR3
MRF7S38010HSR3
3400 - 3600 MHz, 2 W AVG., 30 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465I - 02, STYLE 1
NI - 400 - 240
MRF7S38010HR3
CASE 465J - 02, STYLE 1
NI - 400S - 240
MRF7S38010HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
掳C
掳C
掳C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80掳C, 10 W CW
Case Temperature 77掳C, 2 W CW
Symbol
R
胃JC
Value
(2,3)
2.05
2.24
Unit
掳C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S38010HR3 MRF7S38010HSR3
1
RF Device Data
Freescale Semiconductor

MRF7S38010HR3 产品属性

  • 250

  • 分离式半导体产品

  • RF FET

  • -

  • LDMOS

  • 3.4GHz

  • 15dB

  • 30V

  • 10µA

  • -

  • 160mA

  • 2W

  • 65V

  • NI-400-240

  • NI-400-240

  • 带卷 (TR)

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