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MRF7S27130HR3 Datasheet

  • MRF7S27130HR3

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • 444.51KB

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF7S27130H
Rev. 0, 9/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for WiMAX base station applications with frequencies up to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
鈥?/div>
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ
= 1500 mA,
P
out
= 23 Watts Avg., f = 2500 and 2700 MHz, 802.16d, 64 QAM
3
/
4
,
4 bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain 鈥?16.5 dB
Drain Efficiency 鈥?20%
Device Output Signal PAR 鈥?8.2 dB @ 0.01% Probability on CCDF
ACPR @ 5.25 MHz Offset 鈥?- 49 dBc in 0.5 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 105 Watts CW
Peak Tuned Output Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
Greater Negative Gate - Source Voltage Range for Improved Class C
Operation
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S27130HR3
MRF7S27130HSR3
2500- 2700 MHz, 23 W AVG., 28 V
WiMAX
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF7S27130HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF7S27130HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25掳C
Derate above 25掳C
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
- 0.5, +65
- 6.0, +10
32, +0
- 65 to +150
150
225
150
0.83
Unit
Vdc
Vdc
Vdc
掳C
掳C
掳C
W
掳C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80掳C, 104 W CW
Case Temperature 69掳C, 23 W CW
Symbol
R
胃JC
Value
(2,3)
0.32
0.36
Unit
掳C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Design Tools (Software & Tools)/Calculators to access MTTF calculators
by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
铮?/div>
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF7S27130HR3 MRF7S27130HSR3
1
RF Device Data
Freescale Semiconductor

MRF7S27130HR3 产品属性

  • 250

  • 分离式半导体产品

  • RF FET

  • -

  • LDMOS

  • 2.5GHz

  • 16.5dB

  • 28V

  • 10µA

  • -

  • 1.5A

  • 23W

  • 65V

  • NI-780

  • NI-780

  • 带卷 (TR)

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