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SST39WF800A Datasheet

  • SST39WF800A

  • 8 Mbit (x16) Multi-Purpose Flash

  • 443.38KB

  • 25页

  • SST

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8 Mbit (x16) Multi-Purpose Flash
SST39WF800A
SST39WF800A1.8V 8Mb (x16) MPF memory
Data Sheet
FEATURES:
鈥?Organized as 512K x16
鈥?Single Voltage Read and Write Operations
鈥?1.65-1.95V
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption (typical values at 5 MHz)
鈥?Active Current: 5 mA (typical)
鈥?Standby Current: 5 碌A (typical)
鈥?Sector-Erase Capability
鈥?Uniform 2 KWord sectors
鈥?Block-Erase Capability
鈥?Uniform 32 KWord blocks
鈥?Fast Read Access Time
鈥?90 ns
鈥?Latched Address and Data
鈥?Fast Erase and Word-Program
鈥?Sector-Erase Time: 36 ms (typical)
鈥?Block-Erase Time: 36 ms (typical)
鈥?Chip-Erase Time: 140 ms (typical)
鈥?Word-Program Time: 28 碌s (typical)
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End-of-Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?CMOS I/O Compatibility
鈥?JEDEC Standard
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?48-ball TFBGA (6mm x 8mm)
鈥?48-ball WFBGA (5mm x 6mm) Micro-Package
鈥?48-ball XFLGA (5mm x 6mm) Micro-Package
鈥?All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39WF800A device is a 512K x16 CMOS Multi-
Purpose Flash (MPF) manufactured with SST鈥檚 proprietary,
high performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with
alternate approaches. The SST39WF800A writes (Pro-
gram or Erase) with a 1.65-1.95V power supply. This
device conforms to JEDEC standard pin assignments for
x16 memories.
Featuring
high-performance
Word-Program,
the
SST39WF800A device provides a typical Word-Program
time of 28 碌sec. The device uses Toggle Bit or Data# Poll-
ing to detect the completion of the Program or Erase opera-
tion. To protect against inadvertent writes, it has on-chip
hardware and software data protection schemes.
Designed, manufactured, and tested for a wide spectrum of
applications, this device is offered with a guaranteed typical
endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
The SST39WF800A device is suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
it significantly improves performance and reliability, while
lowering power consumption. It inherently uses less energy
漏2006 Silicon Storage Technology, Inc.
S71258-05-000
7/06
1
during Erase and Program than alternative flash technolo-
gies. When programming a flash device, the total energy
consumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash technologies. These devices also improve flexibility
while lowering the cost for program, data, and configuration
storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet surface mount requirements, the SST39WF800A
is offered in a 48-ball TFBGA package and a 48-ball Micro-
Package. See Figure 3 and Figure 2 for pin assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

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