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08090 Datasheet

  • 08090

  • LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

  • 205.04KB

  • 10页

  • INFINEON   INFINEON

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PTF080901
LDMOS RF Power Field Effect Transistor
90 W, 869鈥?60 MHz
Description
The PTF080901 is a 90 W, internally matched
GOLDMOS
FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
Features
鈥?/div>
鈥?/div>
Broadband internal matching
Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P鈥?dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
90 W (CW) output power
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 959.8 MHz
0
55
Efficiency
50
45
40
35
30
400 kHz
25
20
600 kHz
36
38
40
42
44
46
48
50
15
10
-10
-20
-30
-40
-50
-60
-70
-80
-90
鈥?/div>
Modulation Spectrum (dB)
Drain Efficiency (%)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
PTF080901E
Package 30248
Output Power (dBm)
PTF080901F
Package 31248
ESD:
Electrostatic discharge sensitive device鈥攐bserve handling precautions!
RF Characteristics
at T
CASE
= 25掳C unless otherwise indicated
EDGE Measurements
(not subject to production test鈥攙erified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 700 mA, P
OUT
= 45 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
Min
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ
2.5
鈥?2
鈥?4
18
40
Max
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Unit
%
dBc
dBc
dB
%
畏
D
Two鈥揟one Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 650 mA, P
OUT
= 90 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Data Sheet
1
Symbol
G
ps
Min
17
40
鈥?/div>
Typ
18
42
鈥?2
Max
鈥?/div>
鈥?/div>
鈥?9
Unit
dB
%
dBc
2004-04-05
畏
D
IMD

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