1N4153 Small Signal Diode
January 2005
1N4153
Small Signal Diode
DO-35
Color Band Denotes Cathode
Absolute Maximum Ratings *
T
Symbol
V
RRM
I
F(AV)
I
FSM
a
= 25掳C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Pulse Width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
Value
75
200
1.0
4.0
-65 to +200
175
Unit
V
mA
A
A
掳C
掳C
T
STG
T
J
* These ratings are limiting values above which the serviceability of the diode may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
C
= 25掳C unless otherwise noted
Parameter
Value
500
300
Unit
mW
掳C/W
Electrical Characteristics
Symbol
V
R
V
F
Breakdown Voltage
Forward Voltage
Parameter
I
R
= 5碌A
I
F
= 0.1mA
I
F
= 0.25mA
I
F
= 1.0mA
I
F
= 2.0mA
I
F
= 10mA
I
F
= 20mA
Conditions
Min.
75
0.49
0.53
0.59
0.62
0.70
0.74
Max
0.55
0.59
0.67
0.70
0.81
0.88
50
50
2
4
2
Units
V
V
V
V
V
V
V
nA
碌A
pF
ns
ns
I
R
C
T
t
rr1
t
rr2
Reverse Leakage
Total Capacitance
Reverse Recovery Time
V
R
= 50V
V
R
= 50V, T
A
= 150掳C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA, R
L
= 100鈩? I
rr
= 1.0mA
I
F
= 10mA, V
R
= 6.0V
R
L
= 100鈩? I
rr
= 1.0mA
漏2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
1N4153 Rev. C
1
2
