鈭?/div>
0.2A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SC5824
!
External dimensions
(Units : mm)
MPT3
1.5
0.4
1.0
(1)
4.0
2.5
0.5
0.5
(3)
1.5
0.4
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Sourse)
0.4
Each lead has same dimensions
Abbreviated symbol : UN
!Applications
Low Frequency Amplifier
High speed switching
!
Structure
PNP Silicon epitaxial planar transistor
!
Packaging specifications
Package
Type
2SA2071
Code
Basic ordering unit (pieces)
Taping
T100
1000
!
Absolute maximum ratings
(Ta=25掳C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
鈭?0
鈭?0
鈭?
鈭?
鈭?
500
2.0
150
鈭?5~+150
Unit
V
V
V
A
A
鈭?
mW
W
鈭?
掳C
掳C
鈭?
Pw=100ms
鈭?
Mounted on a 40脳40脳0.7 (mm) ceramic substrate
1.5
1.6
4.5
3.0
(2)
1/3
1
2
3
4
