鈻?/div>
Absolute Maximum Ratings
T
a
=
25掳C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
鈭?00
鈭?00
鈭?
鈭?0
鈭?00
200
150
鈭?5
to
+150
Unit
V
V
V
mA
mA
mW
掳C
掳C
10藲
(0.95) (0.95)
1.9
卤0.1
2.90
+0.20
鈥?.05
1.1
+0.2
鈥?.1
1.1
+0.3
鈥?.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Marking Symbol: 7N
鈻?/div>
Electrical Characteristics
T
a
=
25掳C
卤
3掳C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Collector output capacitance
(Common base, input open circuited)
Transition frequency
Symbol
V
CEO
V
EBO
h
FE
V
CE(sat)
C
ob
f
T
Conditions
I
C
= 鈭?00 碌A,
I
B
=
0
I
E
= 鈭? 碌A,
, I
C
=
0
V
CE
= 鈭?0
V, I
C
= 鈭?
mA
I
C
= 鈭?0
mA, I
B
= 鈭?
mA
V
CB
= 鈭?0
V, I
E
=
0, f
=
1 MHz
V
CB
= 鈭?0
V, I
E
=
10 mA, f
=
200 MHz
7
50
Min
鈭?00
鈭?
30
150
鈭?/div>
0.6
Typ
Max
Unit
V
V
铮?/div>
V
pF
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
P
30 to 100
Q
60 to 150
0 to 0.1
0.4
卤0.2
5藲
Publication date: January 2003
SJC00286AED
1
1
2
3
