2SA2018 / 2SA2030 / 2SA2119K
Transistors
Low frequency transistor
2SA2018 / 2SA2030 / 2SA2119K
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
2SA2018
0.3
(3)
(1)
(2)
0.2
0.5 0.5
0.2
0.55
0.7
Applications
For switching, for muting.
External dimensions
(Unit : mm)
1.0
Features
1) A collector current is large.
2) Collector saturation voltage is low.
V
CE (sat)
鈮?/div>
250mA
At I
C
= 200mA / I
B
= 10mA
0.8
1.6
0.15
0.1Min.
Each lead has same dimensions
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol :
BW
1.6
(1) Emitter
(2) Base
(3) Collector
2SA2030
0.2
1.2
0.32
1.2
0.8
(2)
(3)
(1)
0.2
0.4 0.4
0.8
0.13
0.5
0.22
Each lead has same dimensions
ROHM : VMT3
Abbreviated symbol :
BW
Absolute maximum ratings
(Ta=25掳C)
0.95 0.95
1.9
(1) Base
(2) Emitter
(3) Collector
0.4
Collector current
鈭?/div>
0.15
(3)
1.6
2.8
0.8
1.1
Collector power dissipation
Junction temperature
Storage temperature
鈭桽ingle
pulse, Pw=1ms
150
300
150
鈭?5
to
+150
mW
掳C
掳C
0.3Min.
(2)
Parameter
Collector-base voltage
Collector-emitter voltage
Symbol
V
CBO
V
CEO
I
C
I
CP
VMT3
P
C
EMT3
SMT3
Tj
Tstg
Limits
15
12
500
1
Unit
V
V
mA
A
2SA2119K
(1)
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
Abbreviated symbol :
BW
2.9
(1) Emitter
(2) Base
(3) Collector
Electrical characteristics
(Ta=25掳C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BV
CBO
15
鈭?/div>
鈭?/div>
V I
C
=10碌A
12
鈭?/div>
鈭?/div>
V I
C
=1mA
Collector-emitter breakdown voltage BV
CEO
Emitter-base breakdown voltage
BV
EBO
6
鈭?/div>
鈭?/div>
V I
E
=10碌A
Collector cutoff current
I
CBO
鈭?/div>
鈭?/div>
100 nA V
CB
=15V
270
鈭?/div>
680
鈭?/div>
DC current transfer ratio
h
FE
V
CE
=2V
/ I
C
=10mA
鈭?/div>
100 250 mV I
C
=200mA
/ I
B
=10mA
Collector-emitter saturation voltage V
CE (sat)
鈭?/div>
260
鈭?/div>
MHz V
CE
=2V,
I
E
=10mA,
f
T
=100MHz
Transition frequency
f
T
Output capacitance
Cob
鈭?/div>
6.5
鈭?/div>
pF V
CB
=10V,
I
E
=0A,
f=1MHz
Rev.A
1/2
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