Transistors
2SC2412K / 2SC4081 / 2SC4617 /
2SC5658 / 2SC1740S
General purpose transistor (50V, 0.15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 /
2SC1740S
!Features
1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA1037AK /
2SA1576A / 2SA1774H /
2SA2029 / 2SA933AS.
!
External dimensions
(Units : mm)
(1)
2SC2412K
2SC4081
(1)
2SC4617
0.65 0.65
(2)
0.95 0.95
1.9
1.3
2.0
(1)
(2)
0.2
0.5 0.5
(3)
0.4
(3)
0.3
1.6
2.8
2.1
0.8
0.2
0.15
1.6
0.7
0.9
0.15
0.2
1.25
0.3
(3)
0.55
0.15
0.8
1.1
0~0.1
0.3Min.
!
Structure
Epitaxial planar type
NPN silicon transistor
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
JEDEC : SOT-346
(1) Emitter
(2) Base
(3) Collector
0~0.1
0.1Min.
0.1Min.
Each lead has same dimensions
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
(1) Emitter
(2) Base
(3) Collector
0~0.1
ROHM :
EMT3
(1) Emitter
(2) Base
(3) Collector
EIAJ : SC-75A
JEDEC : SOT-416
Abbreviated symbol: B*
Abbreviated symbol: B*
Abbreviated symbol: B*
2SC5658
0.2
1.2
0.8
(2)
(3)
(1)
2SC1740S
4卤0.2
2卤0.2
3卤0.2
0.2
1.2
0.32
0.4 0.4
0.8
0.22
(15Min.)
0.13
0~0.1
0.5
0.45+0.15
鈭?/div>
0.05
0.15Max.
5
3Min.
2.5 +0.4
鈭?/div>
0.1
0.5
0.45 +0.15
鈭?/div>
0.05
(1) (2) (3)
ROHM : VMT3
(1) Base
(2) Emitter
(3) Collector
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
Abbreviated symbol: B*
* Denotes h
FE
!
Absolute maximum
(Ta=25掳C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SC2412K, 2SC4081
Collector power
2SC4617, 2SC5658
dissipation
2SC1740S
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Limits
60
50
7
0.15
0.2
P
C
0.15
0.3
Tj
Tstg
150
鈭?5~+150
掳C
掳C
W
Unit
V
V
V
A
0.7
1.0
1.6
(2)
1
2
3
