Transistor
2SC3314
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1323
4.0卤0.2
Unit: mm
s
Features
q
q
q
q
Optimum for high-density mounting.
Allowing supply with the radial taping.
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
marking
+0.2
0.45鈥?.1
15.6卤0.5
0.7卤0.1
3.0卤0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
5
30
300
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54卤0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Common emitter reverse transfer capacitance
Reverse transfer impedance
(Ta=25藲C)
Symbol
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NF
C
re
Z
rb
Conditions
I
C
= 10碌A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 10V, I
C
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 5MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 2MHz
150
min
30
20
5
70
0.1
0.7
300
2.8
4.0
1.5
50
220
V
V
MHz
dB
pF
鈩?/div>
typ
max
Unit
V
V
V
*
h
FE
Rank classification
B
70 ~ 140
C
110 ~ 220
h
FE
Rank
2.0卤0.2
1
1
2
3
