Transistor
2SC3315
Silicon NPN epitaxial planer type
For high-frequency amplification
Unit: mm
4.0卤0.2
3.0卤0.2
0.7卤0.1
s
Features
q
q
q
q
Optimum for high-density mounting.
Allowing supply with the radial taping.
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
marking
+0.2
0.45鈥?.1
15.6卤0.5
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
30
20
3
15
300
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54卤0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector to base voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Common emitter reverse transfer capacitance
Transition frequency
Noise figure
Power gain
(Ta=25藲C)
Symbol
V
CBO
V
EBO
h
FE*
V
BE
C
re
f
T
NF
PG
Conditions
I
C
= 10碌A, I
E
= 0
I
E
= 10碌A, I
C
= 0
V
CB
= 6V, I
E
= 鈥?mA
V
CB
= 6V, I
E
= 鈥?mA
V
CE
= 6V, I
C
= 1mA, f = 10.7MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 100MHz
V
CB
= 6V, I
E
= 鈥?mA, f = 100MHz
20
450
min
30
3
65
720
0.8
650
3.3
24
5.0
1.0
260
mV
pF
MHz
dB
dB
typ
max
Unit
V
V
*
h
FE
Rank classification
C
65 ~ 160
D
100 ~ 260
h
FE
Rank
2.0卤0.2
1
1
2
3
