Transistor
2SC3930
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1532
2.1卤0.1
Unit: mm
s
Features
q
q
q
0.425
1.25卤0.1
0.425
Optimum for RF amplification of FM/AM radios.
High transition frequency f
T
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0卤0.2
1.3卤0.1
0.65
3
2
0.9卤0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
150
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
0.7卤0.1
0 to 0.1
0.2卤0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
V
s
Electrical Characteristics
Parameter
Collector cutoff current
Forward current transfer ratio
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
(Ta=25藲C)
Symbol
I
CBO
h
FE
f
T
NF
Z
rb
C
re
*
Conditions
V
CB
= 10V, I
E
= 0
V
CB
= 10V, I
E
= 鈥?mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 5MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 2MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
min
typ
max
0.1
0.15
鈥?.05
+0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
0.2
0.3
鈥?
+0.1
Unit
碌A
70
150
250
2.8
22
0.9
220
MHz
4
50
1.5
dB
鈩?/div>
pF
*
h
FE
Rank classification
Rank
h
FE
Marking Symbol
B
70 ~ 140
VB
C
110 ~ 220
VC
1
1
2
3
