Transistor
2SC4417
Silicon NPN epitaxial planer type
For intermadiate frequency amplification of TV image
Unit: mm
2.1卤0.1
s
Features
q
q
q
0.425
1.25卤0.1
0.425
High transition frequency f
T
.
Satisfactory linearity of forward current transfer ratio h
FE
.
S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
0.65
1
2.0卤0.2
1.3卤0.1
0.65
3
2
0.9卤0.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
45
35
4
50
150
150
鈥?5 ~ +150
Unit
V
V
V
mA
mW
藲C
藲C
0.7卤0.1
0 to 0.1
0.2卤0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC鈥?0
S鈥揗ini Type Package
Marking symbol :
2Z
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Common emitter reverse transfer capacitance
(Ta=25藲C)
Symbol
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
re
Conditions
V
CE
= 20V, I
B
= 0
I
C
= 10碌A, I
E
= 0
I
E
= 1mA, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CB
= 10V, I
E
= 鈥?0mA
I
C
= 20mA, I
B
= 2mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 鈥?mA, f = 10.7MHz
500
1.5
45
35
4
20
50
100
0.5
V
MHz
pF
min
typ
max
10
Unit
碌A
V
V
V
0.15
鈥?.05
+0.1
s
Absolute Maximum Ratings
(Ta=25藲C)
0.2
0.3
鈥?
+0.1
1
1
2
