2SC4517/4517A
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
s
Absolute maximum ratings
(Ta=25掳C)
Unit
V
V
V
A
A
W
掳C
掳C
Application :
Switching Regulator and General Purpose
(Ta=25掳C)
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Conditions
V
CB
=800V
V
EB
=7V
I
C
=10mA
V
CE
=4V, I
C
=1A
I
C
=1A, I
B
=0.2A
I
C
=1A, I
B
=0.2A
V
CE
=12V, I
E
=鈥?.25A
V
CB
=10V, f=1MHz
External Dimensions
FM20(TO220F)
4.0
卤0.2
10.1
卤0.2
4.2
卤0.2
2.8 c0.5
Symbol 2SC4517 2SC4517A
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
900
550
7
3(
Pulse
6)
1.5
30(Tc=25掳C)
150
鈥?5 to +150
1000
2SC4517 2SC4517A
100
max
100
max
550
min
10 to 30
0.5
max
1.2
max
6
typ
35
typ
Unit
碌
A
V
V
13.0min
16.9
卤0.3
8.4
卤0.2
碌
A
V
MHz
pF
1.35
卤0.15
1.35
卤0.15
0.85
+0.2
-0.1
0.45
+0.2
-0.1
2.54
2.2
卤0.2
2.4
卤0.2
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
250
R
L
(鈩?
250
I
C
(A)
1
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(A)
0.15
I
B2
(A)
鈥?.45
t
on
(
碌
s)
0.7
max
t
stg
(
碌
s)
4
max
t
f
(
碌
s)
0.5
max
2.54
3.9
B C E
卤0.2
I
C
鈥?V
CE
Characteristics
(Typical)
3
40
0m
A
V
CE
(sat),V
BE
(sat) 鈥?I
C
Temperature Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s a t)
(V )
Ba s e - E m i t te r S at u r a t i o n Vo lt a g e V
B E(s at)
( V )
1.5
I
C
/I
B
= 5 C o ns t.
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
3
( V
CE
= 4 V )
300mA
20 0m A
C o l l e c t o r Cu r r e n t I
C
( A )
15 0m A
2
100 mA
C o l l ec t or C u r r e n t I
C
( A )
1.0
V
BE
( sa t )
2
1
I
B
=40m A
0.5
1
V
C E
( sa t )
0
0.03 0.05
0. 1
0 .5
1
5
0
0
0. 2
0.4
0.6
0.8
1.0
0
0
1
2
3
4
Co l le ct o r -Em i t t er V ol tag e V
C E
(V)
Co l l ec to r C ur r en t I
C
( A)
Ba s e - E m i t t or V o l t a ge V
B E
( V)
( V
CE
= 4 V )
50
D C C u r r e n t G ai n h
FE
12 5藲 C
25 藲 C
Sw i t c hi n g T i m e
t
on鈥?/div>
t
st g鈥?/div>
t
f
(
碌
s )
7
5
t
s tg
V
CC
2 5 0 V
I
C
: I
B 1
: I
B2
= 1: 0. 1 5: 鈥? . 45
1
0.5
t
on
0.1
0.2
t
f
Transient Thermal Resistance
胃
j- a
( 藲C /W )
h
FE
鈥?I
C
Temperature Characteristics
(Typical)
t
o n
鈥
s t g
鈥
f
鈥?I
C
Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
4
鈥?55 藲 C
1
10
0 .5
0 .3
5
0. 02
0.05
0. 1
0.5
1
3
0.5
1
3
1
10
Time t(ms)
0.8
卤0.2
a
b
酶3.3
卤0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
10 0
1000
C ol l e ct o r Cu rre nt I
C
( A)
C ol l ec t or C ur r e nt I
C
( A)
Safe Operating Area
(Single Pulse)
10
50
Reverse Bias Safe Operating Area
10
30
Pc 鈥?Ta Derating
5
s
Ma x im um P ow e r D i s s i p a ti o n P
C
( W )
10
碌
s
5
0
碌
W
ith
Col lec t o r C u r r e n t I
C
( A )
1
0.5
C olle c t or Cu r r e n t I
C
(A )
1
0.5
20
In
fin
ite
he
at
si
nk
0.1
0.05
Without Heatsink
Natural Cooling
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
I
B2
=鈥?.0A
Duty:less than 1%
2SC 45 1 7
10
2S C 45 1 7 A
1 00 0
W i th o u t H e a t s i n k
2
0
0
25
50
75
10 0
125
150
0.01
2
5
10
50
1 00
50 0 1 0 0 0
0.01
50
10 0
5 00
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V)
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i e n t T em p er at u r e T a ( 藲 C )
112
SANKEN
1
