鈻?/div>
Absolute Maximum Ratings
T
a
=
25掳C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
30
20
5
30
125
125
鈭?5
to
+125
Unit
V
V
V
mA
mW
掳C
掳C
5藲
0.70
+0.05
鈥?.03
5藲
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: V
鈻?/div>
Electrical Characteristics
T
a
=
25掳C
卤
3掳C
Parameter
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*
Transition frequency
Noise figure
Reverse transfer impedance
Common-emitter reverse transfer
capacitance
Symbol
I
CBO
h
FE
f
T
NF
Z
rb
C
re
Conditions
V
CB
=
10 V, I
E
=
0
V
CB
=
10 V, I
E
= 鈭?
mA
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
5 MHz
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
2 MHz
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
10.7 MHz
70
150
250
2.8
22
0.9
4.0
50
1.5
Min
Typ
Max
0.1
220
Unit
碌A
铮?/div>
MHz
dB
鈩?/div>
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
B
70 to 140
C
110 to 220
No-rank
70 to 220
Product of no-rank is not classified and have no indication for rank.
0.10 max.
(0.375)
Publication date: December 2002
SJC00281BED
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1
2
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