DATA SHEET
SILICON TRANSISTOR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
鈥?Low Noise, High Gain
鈥?Low Voltage Operation
鈥?Low Feedback Capacitance
C
re
= 0.3 pF TYP.
PACKAGE DIMENSIONS
in millimeters
2.8卤0.2
0.4
鈥?.05
+0.1
1.5
0.65
鈥?.15
+0.1
ORDERING INFORMATION
0.95
0.95
PART
NUMBER
2SC4954-T1
QUANTITY
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side of the
tape.
2.9卤0.2
2
3
2SC4954-T2
3 Kpcs/Reel.
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)
1.1 to 1.4
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 藲C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
9
6
2
10
60
150
鈥?5 to +150
V
V
V
mA
mW
藲C
藲C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
The information in this document is subject to change without notice.
Caution;
Electrostatic Sensitive Device.
Document No. P10376EJ2V0DS00 (2nd edition)
(Previous No. TD-2405)
Date Published July 1995 P
Printed in Japan
0 to 0.1
漏
0.16
鈥?.06
+0.1
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
Marking
0.3
+0.1
1
0.4
鈥?.05
1993
1
2
3
4
5
6
