Power Transistors
2SC5270, 2SC5270A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5卤0.5
4.5
10.0
s
Features
q
q
q
蠁3.2卤0.1
5掳
26.5卤0.5
3.0卤0.3
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
(T
C
=25藲C)
Ratings
1500
1600
1500
1600
600
5
20
12
8
120
3
150
鈥?5 to +150
Unit
5掳
23.4
22.0卤0.5
2.0 1.2
5掳
18.6卤0.5
5掳
5掳
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
base voltage
2SC5270
2SC5270A
2SC5270
2SC5270A
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
Ta=25掳C
P
C
T
j
T
stg
4.0
2.0卤0.2
1.1卤0.1
2.0
0.7卤0.1
5.45卤0.3
3.3卤0.3
0.7卤0.1
5.45卤0.3
5.5卤0.3
V
5掳
V
1
2
3
2.0
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25掳C
dissipation
Junction temperature
Storage temperature
V
V
A
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
TOP鈥?E Full Pack Package
s
Electrical Characteristics
Parameter
2SC5270
Collector cutoff
current
2SC5270A
2SC5270
2SC5270A
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
(T
C
=25藲C)
Symbol
Conditions
V
CB
= 1000V, I
E
= 0
I
CBO
V
CB
= 1500V, I
E
= 0
V
CB
= 1600V, I
E
= 0
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 6A
I
C
= 6A, I
B
= 1.5A
I
C
= 6A, I
B
= 1.5A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 6A, I
B1
= 1.5A, I
B2
= 鈥?A
3
1.5
0.12
2.5
0.2
5
min
typ
max
50
50
1
1
50
12
3
1.5
V
V
MHz
碌s
碌s
Unit
碌A
mA
碌A
1
1
2
