PRELIMINARY DATA SHEET
SILICON TRANSISTOR
2SC5369
NPN EPITAXIAL SILICON TRANSISTOR FOR
MICROWAVE AMPLIFICATION
FEATURES
鈥?High f
T
14 GHz TYP.
鈥?High gain
| S
21
e |
2
PACKAGE DIMENSION (in mm)
2.1卤0.1
1.25卤0.1
0.2
鈥?
+0.1
= 14 dB TYP.
1
0.65 0.65
2.0卤0.2
6
4
5
@f = 2 GHz, V
CE
= 3 V, I
C
= 10 mA
1.3
鈥?NF = 1.3 dB, @f = 2 GHz, V
CE
= 3 V, I
C
= 3 mA
鈥?6-pin small mini mold package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
掳
C)
0.9卤0.1
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
I
T
stg
RATING
9
6
2
30
150
150
鈥?5 to +150
UNIT
V
V
V
mA
mW
掳C
掳C
0.7
3
2
PIN CONNECTIONS
1. Emitter
2. Emitter
3. Base
4. Emitter
5. Emitter
6. Collector
Document No. P11644EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
0 to 0.1
漏
0.15
鈥?
+0.1
1996