Power Transistors
2SC5406, 2SC5406A
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5卤0.5
4.5
10.0
s
Features
q
q
q
蠁3.2卤0.1
5掳
26.5卤0.5
3.0卤0.3
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
(T
C
=25藲C)
Ratings
1500
1500
600
5
20
14
8
100
3
150
鈥?5 to +150
Unit
V
V
V
V
A
A
A
W
藲C
藲C
5掳
23.4
22.0卤0.5
2.0 1.2
5掳
18.6卤0.5
5掳
5掳
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25掳C
dissipation
Ta=25掳C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
4.0
2.0卤0.2
1.1卤0.1
2.0
0.7卤0.1
5.45卤0.3
3.3卤0.3
0.7卤0.1
5.45卤0.3
5.5卤0.3
5掳
1
2
3
2.0
1:Base
2:Collector
3:Emitter
TOP鈥?E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
2SC5406
2SC5406A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 7A
I
C
= 7A, I
B
= 1.75A
I
C
= 7A, I
B
= 1.75A
V
CE
= 10V, I
C
= 0, f = 0.5MHz
I
C
= 7A, I
B1
= 1.75A, I
B2
= 鈥?.5A
3
4.0
0.3
5
min
typ
max
50
1
50
12
3
1.5
V
V
MHz
碌s
碌s
Unit
碌A
mA
碌A
1
1
2
