Power Transistors
2SC5519
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5卤0.5
4.5
10.0
s
Features
q
q
q
蠁3.2卤0.1
5掳
26.5卤0.5
3.0卤0.3
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
(T
C
=25藲C)
Ratings
1700
1700
5
16
8
3
50
3
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
藲C
藲C
5掳
23.4
22.0卤0.5
2.0 1.2
5掳
18.6卤0.5
5掳
5掳
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25掳C
dissipation
Ta=25掳C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
4.0
2.0卤0.2
1.1卤0.1
2.0
0.7卤0.1
5.45卤0.3
3.3卤0.3
0.7卤0.1
5.45卤0.3
5.5卤0.3
5掳
1
2
3
2.0
1:Base
2:Collector
3:Emitter
TOP鈥?E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
(T
C
=25藲C)
Symbol
I
CBO
V
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1700V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 5V, I
C
= 6A
I
C
= 6A, I
B
= 1.2A
I
C
= 6A, I
B
= 1.2A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 6A, I
B1
= 1.2A, I
B2
= 鈥?.4A
I
F
= 6A
3
5.0
0.5
鈥?
5
5
10
3
1.5
V
V
MHz
碌s
碌s
V
min
typ
max
50
1
Unit
碌A
mA
V
1
1
2
