銆圱ransistor銆?/div>
DEVELOPING
2SC5814锛?SC5815锛?SC5816锛?SC5817
For Low Frequency Amplify Application
Silicon NPN Epitaxial Type
DESCRIPTION
2SC5814锛?SC5815锛?SC5816锛?SC5817 is a super mini package
silicon NPN epitaxial type transistor. It is designed for low frequency
voltage amplify application.
OUTLINE DRAWING
2SC5814
2.5
0.5
1.5
0.5
0.425
Unit锛氾拷½锟斤拷½锟?/div>
2SC5815
2.1
1.25
0.425
0.4
0.95
0.65
2.9
1.90
2.0
1.3
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
鈶?/div>
FEATURE
鈼?Facilitates miniaturization and high-density mounting
0.16
0.15
0.8
0.7
0.95
鈼?Excellent linearity of DC forward current gain
鈼廘ow collecter to emitter saturation voltage
V
CE(sat)
=0.3V max (@I
C
=30mA,I
B
=1.5mA)
1.1
0鈭?.1
0.9
0.65
APPLICATION
For hybrid IC , small type machine low frequency voltage amplify
application
JEITA锛歋C-59
JEDEC锛歴imilar to TO-236
Electrode connections
鈶狅細base
鈶★細emitter
鈶細collecter
2SC5816
0.4
1.6
0.8
0.4
0.3
JEITA锛歋C-70
JEDEC锛氣垝
Electrode connections
鈶狅細base
鈶★細emitter
鈶細collecter
2SC5817
1.2
0.8
0.5
0鈭?.1
1.6
1.0
鈶?/div>
鈶?/div>
1.2
0.8
0.5
鈶?/div>
0.4
鈶?/div>
鈶?/div>
鈶?/div>
MARKING
0.7
0.55
0.1
0.45
0.4
JEITA锛氣垝
JEDEC锛氣垝
0鈭?.1
锛?锛?/div>
TYPE NAME
锟?frac12;锟?/div>
锛︼讥
ITEM
JEITA锛氣垝
JEDEC锛氣垝
Electrode connections
鈶狅細base
鈶★細emitter
鈶細collecter
Electrode connections
鈶狅細base
鈶★細emitter
鈶細collecter
MAXIMUM RATINGS (Ta=25鈩?
SYMBOL
V
CBO
V
EBO
V
CEO
I
C
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
RATINGS
2SC5814
2SC5815
60
6
60
125
150
锛?25
-55鈭硷紜125
125
100
2SC5816
2SC5817
UNIT
V
V
V
mA
mW
鈩?/div>
鈩?/div>
P
C
T
j
T
stg
ISAHAYA ELECTRONICS CORPORATION
0.1
0.25
0.3
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