鈥?/div>
Wide safe operation area
26.5
卤0.5
(23.4)
(2.0)
5藲
(4.0)
2.0
卤0.2
1.1
卤0.1
0.7
卤0.1
5.45
卤0.3
10.9
卤0.5
5.5
卤0.3
5藲
5藲
I
Absolute Maximum Ratings
T
C
=
25掳C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
*
Collector power dissipation
T
a
=
25掳C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CES
V
CEO
V
EBO
I
B
I
C
I
CP
P
C
Rating
1 700
1 700
600
7
7.5
15
25
60
3
150
鈭?5
to
+150
掳C
掳C
Unit
V
V
V
V
A
A
A
W
3.3
卤0.3
18.6
卤0.5
(2.0)
Solder Dip
5藲
1
2
3
(2.0)
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Marking Symbol: C5931
Internal Connection
B
C
Note) *: Non-repetitive peak collector current
E
I
Electrical Characteristics
T
C
=
25掳C
卤
3掳C
Parameter
Collector-base cutoff current (Emitter open)
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
=
1 000 V, I
E
=
0
V
CB
=
1 700 V, I
E
=
0
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
7.5 A
I
C
=
7.5 A, I
B
=
1.88 A
I
C
=
7.5 A, I
B
=
1.88 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
7.5 A, Resistance loaded
I
B1
=
1.88 A, I
B2
= 鈭?.75
A
3
2.7
0.2
5
Min
Typ
Max
50
1
50
10
3
1.5
Unit
碌A
mA
碌A
铮?/div>
V
V
MHz
碌s
碌s
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
22.0
卤0.5
(1.2)
Publication date: March 2004
SJD00314AED
1
1
2
3
