Transistor
2SD1511
Silicon NPN epitaxial planer type darlington
Unit: mm
For low-frequency output amplification
s
Features
2.6卤0.1
4.5卤0.1
1.6卤0.2
1.5卤0.1
q
q
q
Forward current transfer ratio h
FE
is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: h
FE
= 4000 to 2000.
A shunt resistor is omitted from the driver.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
(Ta=25藲C)
0.4max.
45掳
1.0
鈥?.2
+0.1
0.4卤0.08
0.5卤0.08
1.5卤0.1
3.0卤0.15
3
2
1
4.0
鈥?.20
0.4卤0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
marking
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
100
80
5
1.5
1
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
C
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?2
Mini Power Type Package
Marking symbol :
P
Internal Connection
藲C
B
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100碌A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100碌A, I
C
= 0
V
CE
= 10V, I
C
= 1A
*2
I
C
= 1.0A, I
B
= 1.0mA
*2
I
C
= 1.0A, I
B
= 1.0mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
150
*2
E
min
typ
max
100
100
Unit
nA
nA
V
V
V
100
80
5
4000
40000
1.8
2.2
MHz
Pulse measurement
*1
h
FE
Rank classification
Rank
h
FE
Q
R
S
4000 ~ 10000 8000 ~ 20000 16000 ~ 40000
PQ
PR
PS
Marking Symbol
2.5卤0.1
+0.25
V
V
1
1
2
