Power Transistors
2SD1753
Silicon NPN triple diffusion planar type
Unit: mm
7.0卤0.3
3.5卤0.2
For power amplification with high forward current transfer ratio
7.2卤0.3
0.8卤0.2
3.0卤0.2
1.0卤0.2
q
q
q
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
200
150
6
2.5
1
0.1
15
1.3
150
鈥?5 to +150
Unit
V
V
10.2卤0.3
10.0
鈥?.
+0.3
s
Features
1.1卤0.1
0.75卤0.1
0.85卤0.1
0.4卤0.1
2.3卤0.2
4.6卤0.4
1
2
3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25掳C
dissipation
Ta=25掳C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
1:Base
2:Collector
3:Emitter
I Type Package
3.5卤0.2
2.0卤0.2
7.0卤0.3
Unit: mm
0 to 0.15
7.2卤0.3
V
A
A
A
W
藲C
3.0卤0.2
1.0 max.
2.5
0.75卤0.1
1.1卤0.1
0.5 max.
0.9卤0.1
0 to 0.15
1
2
3
2.3卤0.2
4.6卤0.4
藲C
1:Base
2:Collector
3:Emitter
I Type Package (Y)
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.2A
I
C
= 0.5A, I
B
= 0.02A
V
CE
= 4V, I
C
= 0.1A, f = 10MHz
25
150
500
2000
1
V
MHz
min
typ
max
100
100
Unit
碌A
碌A
V
*
h
FE
Rank classification
Q
P
Rank
h
FE
500 to 1200 800 to 2000
2.5卤0.2
1.0
2.5卤0.2
1.0
1
1
2
