Ordering number : EN3971
NPN Epitaxial Planar Silicon Transistor
2SD1908
CRT Display Horizontal Deflection Output
Applications
Features
鈥?Fast switching speed.
Package Dimensions
unit: mm
鈥?Especially suited for use in high-definition CRT display :
2049B-TO-220MF
VCC=6 to 12V.
鈥?Wide ASO and highly resistant to breakdown.
[2SD1908]
Specifications
Absolute Maximum Ratings
at Ta=25掳C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tc=25掳C
Tj
Tstg
Conditions
Ratings
E : Emitter
C : Collector
B : Base
SANYO : TO-220MF
330
150
6
7
12
4
1.65
50
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
W
掳C
掳C
Electrical Characteristics
at Ta=25掳C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Fall Time
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
tf
Conditions
VCB=200V, IE=0
VEB=5V, IC=0
VCE=1V, IC=1A
VCE=1V, IC=5A
VCE=10V, IC=0.5A
IC=5A, IB=0.5A
IC=5A, IB=0.5A
IC=1mA, IE=0
IC=1mA, RBE=鈭?/div>
IE=1mA, IC=0
IC=5A, IB1=鈥揑B2=0.5A
Ratings
min
typ
max
100
100
50
40
1
1.2
330
150
6
0.5
MHz
V
V
V
V
V
碌s
Unit
碌A
mA
15
10
10
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) 8-0537 No.3971-1/3
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