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Power Transistors

2SD2018

Silicon NPN epitaxial planar type darlington

For low-frequency amplification

8.0

+0.5

鈥?.1

Unit: mm

3.2

卤0.2

鈻?/div>

Features

鈥?/div>

High forward current transfer ratio h

FE

鈥?/div>

Built-in 60 V Zener diode between base to collector

蠁

3.16

卤0.1

3.8

卤0.3

11.0

卤0.5

1.9

卤0.1

鈻?/div>

Absolute Maximum Ratings

T

a

=

25掳C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Emitter-base voltage (Collector open)

Collector current

Peak collector current

Collector power

dissipation

Junction temperature

Storage temperature

T

j

T

stg

T

C

=

25掳C

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

P

C

Rating

60

+25

鈭?0

+25

60

鈭?0

Unit

V

A

W

掳C

B

1

2

3

0.75

卤0.1

4.6

卤0.2

5

1

1.5

1.2

5.0

150

鈭?5

to

+150

0.5

卤0.1

0.5

卤0.1

2.3

卤0.2

1.76

卤0.1

16.0

卤1.0

1: Emitter

2: Collector

3: Base

TO-126B-A1 Package

Internal Connection

C

Note) *: With a 100 mm

脳

100 mm

脳

2 mm Al heat sick.

R

1

R

2

E

鈻?/div>

Electrical Characteristics

T

a

=

25掳C

卤

3掳C

Parameter

Collector-base voltage (Emitter open)

Collector-emitter voltage (Base open)

Collector-base cutoff current (Emitter open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio

*

Collector-emitter saturation voltage

*

Base-emitter saturation voltage

*

Symbol

V

CBO

V

CEO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE(sat)

Conditions

I

C

= 100

碌A,

I

E

= 0

I

C

= 1 mA, I

B

= 0

V

CB

=

25 V, I

E

=

0

V

EB

=

4 V, I

C

=

0

V

CE

=

10 V, I

C

=

1.0 A

I

C

=

1.0 A, I

B

=

1.0 mA

I

C

=

1.0 A, I

B

=

1.0 mA

6 500

Min

50

Typ

Max

85

1

2

40 000

1.8

2.2

Unit

V

碌A

mA

铮?/div>

V

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. *: Pulse measurement

3.05

卤0.1

Publication date: May 2003

SJD00239BED

1

数据列表
2SD2018 View all Specifications
标准包装
1,000
类别
分离式半导体产品
家庭
晶体管(BJT) - 单路
系列
-
晶体管类型
NPN - 达林顿
电流 - 集电极 (Ic)（最大）
1A
电压 - 集电极发射极击穿（最大）
60V
Ib、Ic条件下的Vce饱和度（最大）
1.8V @ 1mA，1A
电流 - 集电极截止（最大）
-
在某 Ic、Vce 时的最小直流电流增益 (hFE)
6500 @ 1A，10V
功率 - 最大
5W
频率 - 转换
-
安装类型
通孔
封装/外壳
TO-225AA，TO-126-3
供应商设备封装
TO-126B-A1
包装
散装

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