鈻?/div>
Electrical Characteristics
T
C
=
25掳C
卤
3掳C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE1 *1, 2
h
FE2 *1
h
FE3
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 10
碌A,
I
E
= 0
I
C
= 2 mA, I
B
= 0
I
E
= 10
碌A,
I
C
= 0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
0.5 A
V
CE
=
5 V, I
C
=
1 A
V
CE
=
10 V, I
C
=
1 mA
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
85
50
35
0.2
0.85
200
11
0.4
1.20
V
V
MHz
pF
100
Min
60
50
5
0.1
340
Typ
Max
Unit
V
V
V
碌A
铮?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
85 to 170
R
120 to 240
S
170 to 340
Publication date: May 2003
SJD00244BED
1
1
2
3
4
